The March 2021 issue presents breakthrough research on low-temperature growth of III-nitride semiconductors using radical-enhanced MOCVD, explores the collision course between augmented reality and streaming platforms, and reports on ISAJ's first virtual annual symposium during COVID-19 pandemic.
Important takeaways and highlights from this issue
III-Nitride Innovation.
Novel REMOCVD technique achieves GaN epitaxial growth at 800°C without ammonia gas, reducing production costs by 50% while maintaining crystal quality
AR-Streaming Collision.
Upload-download speed asymmetry creates fundamental conflict between AR applications requiring 10 Gb/s uploads and streaming platforms optimized for downloads
First Virtual Symposium.
11th ISAJ Annual Symposium successfully held virtually with 100+ participants, special COVID-19 session, and parallel tracks for first time
COVID-19 Research Focus.
Special session on pandemic featuring immunological mechanisms, SARS-CoV-2 genetics, Ashwagandha health benefits, and AI societal transformation
India-Japan ICT Partnership.
Ambassador highlights new cooperation area combining India's software prowess with Japan's hardware excellence for S&T collaboration
Article Summaries
Below you'll find condensed summaries from our newsletter articles.
To explore complete research details, figures, and references, view the full newsletter.
From the Editor’s Desk
Greetings and a warm welcome to the first issue of ISAJ Newsletter in 2021! We take this opportunity to wish you a healthy and productive life in 2021 and hope that you are taking all necessary precautions amid COVID-19 pandemic.
In this issue, we present you with two research articles and one event report on 11th Annual ISAJ Symposium-2020. The research articles are on the study of low-temperature growth of III-Nitride materials by radical-enhanced metalorganic chemical vapor deposition and on Augmented Reality and its future prospects. This issue also contains pictures of our 11th annual symposium held last year.
ISAJ organized its 11th Annual Symposium on December 4th, 2020, using Zoom platform. The symposium theme was “Innovations in Science and Technology for New Issues and Challenges”. It had a special interest session on COVID-19. There were around 100 participants, including 8 plenary speakers, 26 invited speakers and 24 student presenters.
Research Spotlight: Low-Temperature Growth of III-Nitride Materials by REMOCVD
By Dr. Frank Wilson Amalraj, Nagoya University
Introduction
III-nitride semiconductors are attractive for optical and electronic device applications such as light emitting diodes (LEDs), laser diodes (LDs), and high electron mobility transistors (HEMTs). The band gaps of III-nitrides are large and direct:
InN: 0.7 eV
GaN: 3.39 eV
AlN: 6.2 eV
Band gaps from 0.7 eV to 6.2 eV can be obtained by suitable combinations in the AlGaInN system spanning the UV and visible ranges.
Challenges with Conventional MOCVD
GaN epitaxial layers grown on Si substrates by metal organic chemical vapor deposition (MOCVD) have several disadvantages:
High V/III ratio: Several thousands, with ammonia consumption accounting for nearly half of production cost
High temperature: Above 1000°C causing GaN decomposition and increased TMG consumption
InN growth difficulty: High temperature prevents effective In-containing nitride growth
Wafer issues: Breakage and bowing on large diameter substrates due to high temperature
Novel REMOCVD Solution
At Nagoya University, we developed the radical-enhanced MOCVD (REMOCVD) method using VHF (very high frequency) plasma to decrease growth temperature:
Key Features:
Uses 100 MHz VHF plasma
No ammonia gas required
Growth temperature reduced to 800°C (from >1000°C)
Remote plasma configuration prevents TMG cracking
Optical Emission Spectroscopy Results
The plasma provides various reactive nitrogen species:
Grounded N atom (⁴Sº)
Metastable N atom (²Dº, ²Pº)
Electronically excited N₂ molecules (A³Σᵤ⁺)
Small amounts of ammonia species generated in the N₂ and H₂ plasma are sufficient for GaN growth.
Growth Results
Homoepitaxial GaN grown at 800°C showed:
Crystal quality: XRC-FWHM of 100 arcsec
Surface morphology: Smooth surfaces confirmed by SEM and AFM
Interface: Eliminated roughness through N₂/H₂ plasma cleaning
This novel method is promising for replacing conventional MOCVD from the viewpoint of production cost and device performance.
Idea Brewing: Augmented Reality Industry and Online Streaming Platforms Are On a Collision Course
By Srikant Manas Kala, Osaka University
The AR Revolution
Augmented Reality (AR), unlike its completely immersive comrade Virtual Reality (VR), is poised to be a mobile paradigm. AR blends the real with the virtual on the go and enhances our view of reality.
AR Requirements:
Live video of the real world
Processing power to analyze objects
Knowledge database for enhancement
Computational power for rendering
Example: Watching a game in a stadium, an AR app can detect players, look up their stats, and display information on your view of the live game.
The Upload-Download Asymmetry
We are voracious consumers of digital media. Between 2012 and 2017, global mobile data consumption increased 17 times, and by 2022 it will further increase 7 times. We will consume 930 exabytes of video data in 2022.
Current Network Strategy:
Bandwidth split favors downloads
Upload speeds are generally slow
This asymmetry benefits streaming services
Creates self-propelling cycle of video consumption
The AR Conundrum
AR is inherently upload-intensive and demands the current asymmetry be reversed:
Camera field view: 60-70 degrees
Data transfer needed: 10 Gb per second (theoretical)
Compressed 4K video: 20-30 Mb/s (practical)
Average US upload speed: 9.75 Mb/s (insufficient)
5G Promise and Limitations
5G offers:
Download speeds up to 300 Mb/s
Upload speeds up to 50 Mb/s
High mobility service up to 100 kmph
Yet it’s still short of bandwidth required for flawless AR experience.
A Data War is Imminent
Global AR/VR data traffic is expected to grow 12-fold from 22 petabytes per month in 2017 to 254 petabytes per month in 2022.
The Conflict:
AR industry needs upload-heavy bandwidth allocation
Streaming platforms want to maintain download-heavy asymmetry
End users will ultimately decide: “Netflix” or “Pokemon Go”
“For now, we just wait and watch and let it play out. Pun intended.”
The 11th annual ISAJ Symposium “Innovations in Science and Technology for New Issues and Challenges” was held virtually on December 4, 2020, using Zoom platform and live-streamed on YouTube.
Opening Session
Welcome Address: Dr. Sunil Kaul, Chairman ISAJ
Inaugural Address: H.E. Mr. Sanjay Kumar Verma, Ambassador of India to Japan (pre-recorded)
Emphasized India-Japan ICT collaboration
India as software powerhouse, Japan as hardware leader
Keynote Lecture: Prof. Masaru Hori, Director cLPS, Nagoya University
Plasma sciences in medicine and agriculture
Future plasma processes towards SDGs
Special COVID-19 Session
Featured talks on:
Immunological mechanisms
SARS-CoV-2 genetics
Role of Ashwagandha in human health
Psychological effects on mental health
Rise of AI in societal transformation
Parallel Sessions (First Time)
Industrial and Technological Innovations
Human Health and Safety
Energy and Environment
Participation
8 plenary talks
26 invited talks
24 student oral presentations
100+ participants from Japan and beyond
16 young researchers in organizing committee
Best Presentation Awards
Human Health and Safety:
Mr. Ashish Kaul (AIST, Tsukuba)
Mr. Ahmed Elwakeel (AIST, Tsukuba)
Energy and Environment:
Mr. Hitesh Supe (Hokkaido University)
Ms. Manpreet Kaur (NIMS, Tsukuba)
Industrial and Technological Innovations:
Mr. Hannibal Paul (Ritsumeikan University)
Mr. Raghav Soni (Osaka University)
Virtual Format Success
Organizing the symposium virtually allowed reaching a broader audience countrywide in Japan and having participants from beyond Japan, marking a successful adaptation to pandemic circumstances.
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